DESCRIPTION
The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.
■ STMicroelectronics PREFERRED SALESTYPE
■ NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE
■ HIGH VOLTAGE CAPABILITY ( > 1400 V )
■ HIGH DC CURRENT GAIN ( TYP. 150 )
■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
■ LOW BASE-DRIVE REQUIREMENTS
■ DEDICATED APPLICATION NOTE AN1184
APPLICATIONS
■ COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.
BU808DFI
STMicroelectronics
21000
N/A
BU808DFI
9810
BU808DFI
ST
217
TO-3PF
BU808DFI
ST/
5000
TO-247
BU808DFI
ST
6000
TO-3P
BU808DFI
ST/意法
880000
TO-3P
BU808DFI
ST
100500
TO-3P
BU808DFI
ST/意法
50000
TO-3PF
BU808DFI
ST
1600
TO-3P
BU808DFI
8866
TO-3PF
BU808DFI
ST/意法
65230
BU808DFI
ST
120000
TO-3P
BU808DFI
ST/
8000
TO-247
BU808DFI
ST
27500
TO-3P
BU808DFI
ST
8021
NA