General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
参考价格:15.1305
型号:BTS410E2E3062ABUMA1 品牌:INF 说明:BTS410E2E3062ABUMA1多少钱,2026年最近一个月行情走势,BTS410E2E3062ABUMA1批发/采购报价,BTS410E2E3062ABUMA1行情走势销售排行榜,BTS410E2E3062ABUMA1报价。
BTS410E2
INFINEO
5000
TO-263
Infineon(英飞凌)
14548
标准封装
Infineon(英飞凌)
18798
TO-263-5
Infineon(英飞凌)
18798
TO-263-5
Infineon(英飞凌)
18798
TO-263-5
BTS410E2
INF
6500
TO-220
INFINEON
8000
N/A
Infineon(英飞凌)
12000
N/A
INFINEON
70000
N/A
英飞凌
5000
Infineon(英飞凌)
18746
TO-263-5
Infineon(英飞凌)
18798
TO-263-5
BTS410E2
INFINEON
1508
TO263-5
BTS410E2
INF
12000
TO-220
INFINEO
80000
TO263-5