DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange.
A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to General section for further information.
FEATURES
• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
BLF147
恩XP
10048
标准封装
BLF147
恩XP
6992
SMD
BLF147
恩XP
70000
N/A
BLF147
MOTOROLA/摩托罗拉
254
TO-59
BLF147
Ampleon USA Inc.
9000
CRFM4
BLF147
恩XP
6000
SOT121
BLF147
Nexperia
20000
N/A
BLF147
恩XP
85600
TO-59
BLF147
恩XP
5500
SMD
BLF147
恩XP
10658
NA
BLF147
恩XP
112
SOT-121B
BLF147
原装
8600
TO-59
BLF147
恩XP
6000
N/A
BLF147
MINI
17
SMD其他电子元
BLF147
恩XP
10787