DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min)
• High DC Current Gain
• Low Saturation Voltage
• Complement to Type BD826
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
• Designed for driver-stages in hi-fi amplifiers and television circuits.
BD825
恩XP
106
TO-126
Rohm Semiconductor
9000
VQFN48SV7070
BD825
恩XP
106
TO-126
ROHM
185600
NA
BD825
PHI
3500
ROHM-罗姆
6328
QFN-48
ROHM/罗姆
2860
NA
ROHM/罗姆
100500
HTSSOP-B54
PHI
5000
原厂正规渠道
RohmSemiconductor
66800
VQFN48SV7070
Rohm Semiconductor
23500
54-HTSSOP-B
PH
1500
原厂封装
ROHM
50
TUMD2MSOD-323HE
BD825
恩XP
50000
TO-126
Rohm Semiconductor
53200
VQFN48SV7070