General Description
The AOP601 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. Standard Product AOP601 is Pb-free (meets ROHS & Sony 259 specifications). AOP601L is a Green Product ordering option. AOP601 and AOP601L are
electrically identical.
Features
n-channel p-channel
VDS(V) = 30V -30V
ID= 7.5A (VGS = 10V) -6.6A
RDS(ON)
< 28mΩ < 35mΩ(VGS= -10V)
< 43mΩ < 58mΩ(VGS=-4.5V)
Schottky
VDS=30V, IF=3A, VF
AOS(万代)
20094
NA
AOS
85
DIP8
AOS
3200
DIP8
AOS
8650
DIP8
AO
6000
SOP-8
AOS
65300
DIP8
AOSMD
25368
PDIP8
AOS/万代
24777
DIP8
AOS/万代
50000
DIP
AOS/万代
6540
DIP8
AO/万代
9000
DIP-8
AOS(万代)
20094
NA
AOS/万代
20
DIP
Alpha & Omega Semiconductor In
9000
8PDIP
AO万国半导体
8130
DIP-8