Features
● Axial lead type devices for through hole design.
● 3kW peak pulse power capability with a 10/1000us
waveform, repetition rate (duty cycle): 0.01
● Excellent clamping capability.
● Low incremental surge resistance.
● Fast response time from 0V to VBR , typically less than
1 ps for uni-directional & 5 ns for bi-directional types.
● Glass passivated chip junction
● Lead-free parts meet environmental standards of
MIL-STD-19500 /228
● Suffix -H indicates Halogen-free part, ex.3KP5.0A-H.
BORN(伯恩半导体)
50000
DIP
YAGEO
59948
P600
YAGEO
50000
P600
ON/DIODES/PANJIT
43000
P-600
LITTELFUSE-力特
43788
TVS.二极管
SUNMATE(森美特)
66688
R-6
JX
7600
P-600
UN SEMICONDUCTOR
10000
con
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发布时间:2026-07-03