Features
• Low on-resistance
RDS = 0.1 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
2SK3212
HITACHI/日立
31518
TO-220
2SK3212
VBSEMI
3055
TO-220FM
2SK3212
Renesas
6200
TO-220FM
2SK3212
NEC
86720
X2SON4
2SK3212
NEC
86720
X2SON4
2SK3212
HITACHI/日立
12888
TO-220FM
VBSEMI/微碧半导体
90000
TO220F
HITACHI/日立
10000
TO-220F
VBSEMI/台湾微碧
3040
TO-220FM
VBSEMI/台湾微碧
50000
TO-220FM
VBSEMI/微碧半导体
48000
TO220F