■ Features
● VDS (V) = 20V
● ID = 10m A
● High forward transfer admittance
1000 μs TYP. (IDSS = 100 μA)
1600 μs TYP. (IDSS = 200 μA)
● Includes diode and high resistance at G - S
2SK1109
RENESAS/瑞萨
5000
SOT-23
2SK1109
RENESAS
360000
SOT23/J31
2SK1109
RENESAS
1000
SOT23
2SK1109
NEC
1000
SOT-23
2SK1109
SMD
15659
NA
2SK1109
NEC
65200
SMD
2SK1109
NEC
34563
2SK1109
NEC
86720
原厂原封装
2SK1109
NEC
50000
SOT-23
2SK1109
RENESAS
8800
SOT23/J31
2SK1109
RENESAS
20000
SOT23/J31
2SK1109
NEC(日电电子)
500000
封装
2SK1109
NEC
20000
SOT-23
2SK1109
NEC
35689
SC59
2SK1109
RENESAS
16900
SOT23/J31