Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.17 Ω typ.
• 4 V gate drive devices
• High speed switching
2SJ528L-E
RENESAS
203
RENES
7500
TO-251
62000
N/A
FUJI
85600
TO-252
RENESAS
3325
TO252
HIT
28500
RENESAS
66880
TO-251
RENESAS
72540
TO252
VBsemi(台湾微碧)
105000
TO-252
HITACHI
35689
SOT-252
RENESAS
1192
null
RENESAS/瑞萨
13400
TO-252
RENESAS/瑞萨
50000
TO-252
RENESAS/瑞萨
3000
TO-252
2SC5570 TO-3PL 双极晶体管 - 双极结型晶体管(BJT) Toshiba 80000pcs
发布时间:2024-08-19