* Low on-resistance
RDS(on)= 0.065 Ωtyp. (at V
GS = –10V, ID= –5A)
* Low drive current
* High speed switching
* 4V gate drive devices.
2SJ506STL-E
VBsemi
10065
TO252
2SJ506STL-E
VBSEMI/台湾微碧
10065
TO252
2SJ506STL-E
VBsemi
9000
TO252
2SJ506STL-E
VBsemi/台湾微碧
20000
TO-252
2SJ506STL-E
R
6000
SOT252
2SJ506STL-E
VBSEMI/台湾微碧
90000
TO252
2SJ506STL-E
VBsemi
50000
TO252
2SJ506STL-E
VBSEMI/台湾微碧
50000
TO252
2SC5570 TO-3PL 双极晶体管 - 双极结型晶体管(BJT) Toshiba 80000pcs
发布时间:2024-08-19