Description
High speed power switching
Features
• Low on-resistance RDS (on)= 0.017 Ωtyp.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
2SJ505STL-E
RENESAS
100
TO263
2SJ505STL-E
RENESA
121
TO263
2SJ505STL-E
RENESA
9800
TO263
2SJ505STL-E
RENESAS
14113
TO-263
2SJ505STL-E
RENESAS
351
TO263
2SJ505STL-E
RENESAS/瑞萨
47186
TO-263
2SJ505STL-E
RENESAS
6200
TO-263
2SJ505STL-E
Renesas(瑞萨)
20094
NA
2SJ505STL-E
RENESAS/瑞萨
8800
TO-263
2SJ505STL-E
RENESAS/瑞萨
20000
TO-263
2SJ505STL-E
RENESAS/瑞萨
20000
TO-263
2SJ505STL-E
RENESAS
9800
原厂封装
2SJ505STL-E
RENESAS/瑞萨
16900
TO-263
2SJ505STL-E
RENESAS/瑞萨
8800
TO-263
2SJ505STL-E
RENESAS
6000
TO-263
2SC5570 TO-3PL 双极晶体管 - 双极结型晶体管(BJT) Toshiba 80000pcs
发布时间:2024-08-19