Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A)
• 4 V gate drive devices.
• Large current capacitance
ID = –5 A
VBsemi
10025
TO251
RENESAS
20000
SOT89
RENESAS
1335
SOT223
onsemi(安森美)
21000
-
CCSEMI
50000
SOT-89
RENESAS/瑞萨
9850
SOT89
HITACHI/日立
1709
SOT89
RENESAS
9800
原厂封装
RENESAS/瑞萨
66600
SOT89
RENESAS/瑞萨
29555
SOT-89
RENESAS
5000
SOT89
SOT-89
15659
NA
RENESAS
30000
SOT89
HITACHI
4200
SOT-89
Renesas
6885
SOT89
2SC5570 TO-3PL 双极晶体管 - 双极结型晶体管(BJT) Toshiba 80000pcs
发布时间:2024-08-19