Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1400V (Min)
·High Switching Speed
APPLICATIONS
·Horizontal deflection output for high resolution display.
·High speed switching regulator output applications.
2SC3885
TOS
1000
10000
TO-3P(H)IS
2SC3885
TOSHIBA/东芝
5000
TO-3P
TOSHIBA/东芝
6000
TO-3PF
2SC3885
TOS
100000
TO-3P
tosh
500000
2SC3885
TOS
1000
2SC3885
10000
TO-3P(H)IS
2SC3885
TOSHIBA/东芝
5000
TO-3P
2SC3885
TOSHIBA/东芝
6000
TO-3PF
2SC3885
TOS
100000
TO-3P
2SC5570 TO-3PL 双极晶体管 - 双极结型晶体管(BJT) Toshiba 80000pcs
发布时间:2024-08-19