DESCRIPTION

➤ 2SB183100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology;

➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature;

➤ Low power losses, high efficiency;

➤ Guard ring construction for transient protection;

➤ High ESD capability;

➤ High surge capability;

➤ Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits;

➤ Chip Size: 1830mm X 1830mm;

➤ Chip Thickness: 280±20mm;

➤ Have two top side electrode materials for customer to choose, detail refer to ordering specifications.