GENERAL DESCRIPTION
SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high
voltage power MOSFET produced using Silan’s DP MOS technology. It
achieves low conduction loss and switching losses. It leads the design
engineers to their power converters with high efficiency, high power
density, and superior thermal behavior. Furthermore, it’s universal
applicable, for example. it is suitable for hard and soft switching
topologies.
FEATURES
24A, 600V, RDS(on)(typ.)=0.14@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
ST
20000
TO-220
ST
16900
TO-220
VBSEMI/台湾微碧
50000
TO220F
ST
30000
TO-220
ST
8560
TO-220
ST/意法
20000
TO-220
ST
16900
TO-220
VBSEMI/台湾微碧
10065
TO220F
ST
86720
TO-220
VBsemi
9000
TO220F
VBSEMI/台湾微碧
20000
N/A
VBsemi
10065
TO220F
ST
3000
TO-220
VBSEMI/台湾微碧
90000
TO220F
ST
20000
TO-220