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2.54mm (.100) Pitch C-Grid짰 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 6 Circuits, Tin (Sn) Plating

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0015800063

MOLEX2

2.54mm (.100) Pitch C-Grid짰 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 6 Circuits, 0.38關m (15關) Gold (Au) Selective Plating

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0015800065

MOLEX2

2.54mm (.100) Pitch C-Grid짰 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 6 Circuits, 0.76關m (30關) Gold (Au) Selective Plating

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0015800067

MOLEX2

2.54mm (.100) Pitch C-Grid짰 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 6 Circuits, Tin (Sn) Plating

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0015800069

MOLEX2

2.54mm (.100) Pitch C-Grid짰 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 6 Circuits, 0.38關m (15關) Gold, (Au) Selective Plating

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1123

KEYSTONE

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1123076

MACOM

Easy connections to equipment

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1123170

QORVO

威讯联合半导体(德州)有限公司

5 W, 32 V, 0.03?? GHz, GaN RF Input-Matched Transistor

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1123-1-G

HellermannTyton

NorthAmericanProductGuide

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1123201185

etc2

etc2未分类制造商

We are Dedicated to Achieving Customer Satisfaction Through Continuous Improvement

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